PART |
Description |
Maker |
2SD211809 |
Low VCE(sat) transistor (strobe flash)
|
Rohm
|
2SA1160 E000473 |
From old datasheet system STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SA1314 E000507 |
From old datasheet system TRANSISTOR (STROBE FLASH, AUDIO POWER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
GT15G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT8G121 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
GT25G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
2SA1802 |
Transistor Silicon PNP Epitaxial Type Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
2SA1242 E000487 |
TRANSISOTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS TRANSISOTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) From old datasheet system
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SA1242 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
TOSHIBA
|
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|